Said proof mass along said first horizontal axis, the respectiveĮxtension of the proof mass being approximately equal to the extension of The process according to claim 4, wherein forming the buried cavityĬomprises defining an extension of said membrane and a respectiveĮxtension of said connection element along said first horizontal axis,Īnd carrying out the etching comprises defining a respective extension of The process according to claim 4, wherein carrying out the etchingĬomprises forming said proof mass and defining a geometry and size ofĦ. Of said wafer starting from said second main surface to reach said buriedĥ. The process according to claim 3, wherein forming the housing cavityĬomprises, after said forming the buried cavity, carrying out an etching Opposite to the first inner surface along said vertical axis of saidĤ. Membrane between the first inner surface and a second inner surface Of said connection element arranged centrally with respect to said The process according to claim 2, wherein forming the buried cavityĬomprises defining the geometry and size of said membrane and furthermore The process according to claim 1, wherein forming the membraneĬomprises forming a buried cavity within said wafer with said membraneīeing suspended above said buried cavity, said membrane located between aįirst inner surface of said buried cavity and said first main surface ofģ. In a central position between said membrane and said proof mass in theĢ. Proof mass is coupled to said membrane by a connection element arranged Membrane in response to environmental mechanical vibrations, whereinįorming the proof mass comprises forming said proof mass so that the Surface along the vertical axis, said proof mass configured to deform the Within the housing cavity, said second surface opposite to the first Layer above a first surface of said membrane forming an electrodeĪrrangement in contact with the piezoelectric material layer and formingĪ proof mass coupled to a second surface of the membrane and located Suspended above said housing cavity forming a piezoelectric material Surfaces further being opposite to one another along a vertical axis įorming a housing cavity within said wafer so that said membrane is Horizontal axis and a second horizontal axis, the first and second main Surfaces extending parallel to a horizontal plane formed by a first Material further having a second main surface, the first and second main A process for manufacturing a MEMS piezoelectric device, comprising:įorming a membrane at a first main surface of a wafer of semiconductor The membrane and the proof mass in the direction of the vertical axis.īEVILACQUA Maria Fortuna (Sant-Agata De Goti (bn), IT) VILLA Flavio Francesco (Milano, IT) SCALDAFERRI Rossana (Sapri (sa), IT) CASUSCELLI Valeria (Napoli, IT) DI MATTEO Andrea (Napoli, IT) FARALLI Dino (Milano, IT) Membrane by a connection element arranged, in a central position, between The proof massĬauses deformation of the piezoelectric material layer in response toĮnvironmental mechanical vibrations. Provided in contact with the piezoelectric material layer.
Membrane with a proof mass coupled to a second surface, opposite to theįirst surface, along the vertical axis. Piezoelectric material layer is arranged above a first surface of the Suspended above the housing cavity at the first main surface. A housing cavity isĪrranged within the monolithic semiconductor body. Plane formed by first and second horizontal axes. Having first and second main surfaces extending parallel to a horizontal MEMS PIEZOELECTRIC DEVICE AND CORRESPONDING MANUFACTURING PROCESSĪ MEMS piezoelectric device includes a monolithic semiconductor body United States Patent Application: 0190115524
0 kommentar(er)
